 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt 2N6714 2N6715 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 40 30 5 2 1 1 E-Line TO92 Compatible 2N6714 2N6715 50 40 UNIT V V V A A W C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector Base Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE fT CCB 55 60 50 50 40 30 5 0.1 0.1 0.5 1.2 55 60 50 50 2N6714 MIN. 50 40 5 0.1 0.1 0.5 1.2 2N6715 MAX. V V V A A A UNIT CONDITIONS. IC=1mA, IE=0 IC=10mA, IB=0* IE=1mA, IC=0 VCB=40V, IE=0 VCB=50V, IE=0 VEB=5V, IC=0 IC=1A, IB=100mA* IC=1A, VCE=1V* IC=10mA, VCE=1V* IC=100mA, VCE=1V* IC=1A, VCE=1V* MAX. MIN. V V 250 500 30 250 500 30 MHz pF IC=50mA, VCE=10V VCE=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-5 This datasheet has been download from: www..com Datasheets for electronics components. |
Price & Availability of 2N6714
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |